New publication on integrated multi-qubit gate device for the ion-trap quantum computer

Electrode configuration around the trap center. The ions are confined above the surface using 10 DC control electrodes and one split RF electrode. The microwave conductor produces an oscillating magnetic near-field gradient to drive an entangling gate.

Our new paper got published in njp Quantum Information.

We demonstrated the experimental realization of a two-qubit Mølmer–Sørensen gate on a magnetic field-insensitive hyperfine transition in 9Be+ ions using microwave near-fields emitted by a single microwave conductor embedded in a surface-electrode ion trap. The design of the conductor was optimized to produce a high oscillating magnetic field gradient at the ion position. The measured gate fidelity is determined to be 98.2±1.2% and is limited by technical imperfections, as is confirmed by a comprehensive numerical error analysis.

The conductor design can potentially simplify the implementation of multi-qubit gates and represents a self-contained, scalable module for entangling gates within the quantum CCD architecture for an ion-trap quantum computer.